EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2110

EPC2110

EPC

Description

GANFET 2NCH 120V 3.4A DIE

In Stock: 18,493

$2.37000

EPC2111

EPC2111

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

In Stock: 29,657

$3.21000

EPC2108

EPC2108

EPC

Description

GANFET 3 N-CH 60V/100V 9BGA

In Stock: 13,386

$1.91000

EPC2110ENGRT

EPC2110ENGRT

EPC

Description

GAN TRANS 2N-CH 120V BUMPED DIE

In Stock: 10,991

$2.37000

EPC2102ENGRT

EPC2102ENGRT

EPC

Description

GANFET 2 N-CHANNEL 60V 23A DIE

In Stock: 10,904

$7.28000

EPC2100ENGRT

EPC2100ENGRT

EPC

Description

GANFET 2 N-CH 30V 9.5A/38A DIE

In Stock: 11,000

$5.18320

EPC2105

EPC2105

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

In Stock: 11,482

$7.14000

EPC2100

EPC2100

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

In Stock: 11,496

$6.94000

EPC2104

EPC2104

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

In Stock: 17,050

$7.17000

EPC2106

EPC2106

EPC

Description

GANFET TRANS SYM 100V BUMPED DIE

In Stock: 12,163

$1.82000

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